7nm: ultrahigh-resolution electron lithography developed at REC FMN

In narrow-period structures, FMN Laboratory achieved ultra-high resolution of the electron beam lithography process close to the limit values ​​declared by the manufacturer of the HSQ resist: 7nm on two-dimensional periodic gratings and 11nm on one-dimensional gratings.

This outstanding achievement has confirmed not only the highest quality of the developed cycle of technological operations (surface preparation -> applying resists -> electronic lithography -> development), but also the efficiency and reliability of the implemented cleanroom infrastructure subsystems.