E-Beam Lithography

50 kV electron beam lithography installation 

voyager11.jpg  

The setup is intended for creating an image with topological dimensions of up to 10 nm in the resist layer using a focused electron beam.

Key features and capabilities:

  • resolution 10 nm (with a period of 40 nm);
  • accelerating voltage of the electron beam from 10 to 50 kV;
  • beam current 50 pA - 40 nA;
  • minimum address grid 0.5 nm in the field of 500 microns;
  • maximum exposure field 500 μm2 with the ability to correct focus in real time;
  • the accuracy of cross-linking fields of 25 nm (+ 3σ) in a field of 100 μm and 35 nm (+ 3σ) in a field of 500 μm;
  • exposure area 150 x 150 mm;
  • automatic or manual assignment of alignment marks (up to 9 marks in each exposure field);
  • automatic, semi-automatic or manual tag recognition;
  • alignment accuracy of 25 nm (+ 3σ) in a field of 100 μm and 35 nm (+ 3σ) in a field of 500 μm;
  • automatic focus correction;
  • possibility of beam shape correction during exposure
  • the size of the substrates is from 5 to 200 mm.

News