
Бауманская интегральная фотоника признана лучшей в мире
НОЦ ФМН - призер в номинации Best Innovation международной премии Optoelectronics Technology Innovation Award
50 kV electron beam lithography installation
The setup is intended for creating an image with topological dimensions of up to 10 nm in the resist layer using a focused electron beam.
Key features and capabilities: