
Bauman Sci-Pub Challenge 2024: команда НОЦ ФМН в призах
Руководитель центра Илья Родионов и аспиранты Дарья Москалева и Никита Коршаков заняли 4-е место в общеуниверситетском рейтинге публикаций
Plasma-chemical etching and vapor deposition plant
The plasma chemical etching unit using fluorine gases is equipped with a high-density inductively coupled plasma source.
Designed for plasma-chemical etching of silicon structures, as well as for the following processes:
The gas configuration in this system allows low-temperature <150°C deposition processes of multilayer films with a speed of >8 nm/min, uniformity across the plate <± 5% and tension <250 MPa of the following materials: