Laser Lithography

Laser lithography installation

The setup is a direct write lithography system. It allows creating a topology of microstructures on silicon, glass, various films and other flat samples coated with i-line photoresist without photomasks.

Key features and capabilities:

• maximum resolution: <1 micron;
• roughness of the edge of the structures [LER, 3σ]: 120 nm;
• uniformity of the line width [3σ]: 200 nm;
• exposure grid: 40 nm;
• autofocus range: 80 microns;
• exposure speed: 5 mm2 / min;
• alignment accuracy [3σ]: 200 nm;
• exposure area: up to 100 x 100 mm;
• sample size: up to 125 x 125 mm (including samples of arbitrary configurations);
• exposure mode in shades of gray (creation of 3D structures, micro-lenses, lens antenna arrays, etc.).