Laser Lithography

Laser lithography installation

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The setup is a direct write lithography system. It allows creating a topology of microstructures on silicon, glass, various films and other flat samples coated with i-line photoresist without photomasks.

Key features and capabilities:

  • maximum resolution: <1 micron;
  • roughness of the edge of the structures [LER, 3σ]: 120 nm;
  • uniformity of the line width [3σ]: 200 nm;
  • exposure grid: 40 nm;
  • autofocus range: 80 microns;
  • exposure speed: 5 mm2 / min;
  • alignment accuracy [3σ]: 200 nm;
  • exposure area: up to 100 x 100 mm;
  • sample size: up to 125 x 125 mm (including samples of arbitrary configurations);
  • exposure mode in shades of gray (creation of 3D structures, micro-lenses, lens antenna arrays, etc.).